2013. 5. 03 1/7 semiconductor technical data kf11n50p/f n channel mos field effect transistor revision no : 1 general description this planar stripe mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for electronic ballast and switching mode power supplies. features h v dss = 500v, i d = 11a h drain-source on resistance : r ds(on) =0.52 ? (max) @v gs = 10v h qg(typ.) = 26nc maximum rating (tc=25 ? ) dim millimeters to-220ab 1.46 a b c d e f g h j k m n o 0.8 0.1 + _ 2.8 0.1 + _ 2.54 0.2 + _ 1.27 0.1 + _ 1.4 0.1 + _ 13.08 0.3 + _ 3.6 0.2 + _ + _ 9.9 0.2 + _ 9.2 0.2 + _ 4.5 0.2 + _ 2.4 0.2 15.95 max 1.3+0.1/-0.05 0.5+0.1/-0.05 3.7 1.5 a f b j g k m l l e i i o c h nn q d q p p 1. gate 2. drain 3. source 12 3 * : drain current limited by maximum junction temperature. g d s to-220is (1) a a b b c c d d e e f f g g h h 1.47 max 1.47 max j j k k l m l n nn o o q r q r 123 m dim millimeters *single gauge lead frame 10.16 0.2 + _ 15.87 0.2 + _ 2.54 0.2 + _ 0.8 0.1 + _ 3.18 0.1 + _ 0.5 0.1 + _ 3.23 0.1 + _ 13.0 0.5 + _ 2.54 0.2 + _ 4.7 0.2 + _ 6.68 0.2 + _ 2.76 0.2 + _ 3.3 0.1 + _ 12.57 0.2 + _ 1. gate 2. drain 3. source characteristic symbol rating unit kf11n50p kf11n50f drain-source voltage v dss 500 v gate-source voltage v gss ? 30 v drain current @t c =25 ? i d 11 11* a @t c =100 ? 7 7* pulsed (note1) i dp 33 33* single pulsed avalanche energy (note 2) e as 400 mj repetitive avalanche energy (note 1) e ar 6.6 mj peak diode recovery dv/dt (note 3) dv/dt 4.5 v/ns drain power dissipation tc=25 ? p d 178 46.3 w derate above 25 ? 1.43 0.37 w/ ? maximum junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? thermal characteristics thermal resistance, junction-to-case r thjc 0.7 2.7 ? /w thermal resistance, junction-to- ambient r thja 62.5 62.5 ? /w kf11n50f kf11n50p equivalent circuit
2013. 5. 03 2/7 kf11n50p/f revision no : 1 electrical characteristics (tc=25 ? ) characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i d =250 a, v gs =0v 500 - - v breakdown voltage temperature coefficient bv dss / t j i d =250 a, referenced to 25 ? - 0.55 - v/ ? drain cut-off current i dss v ds =500v, v gs =0v, - - 10 a gate threshold voltage v th v ds =v gs , i d =250 a 2.5 - 4.5 v gate leakage current i gss v gs = ? 30v, v ds =0v - - ? 100 na drain-source on resistance r ds(on) v gs =10v, i d =5.5a - 0.42 0.52 ? dynamic total gate charge q g v ds =400v, i d =11a v gs =10v (note4,5) - 26 - nc gate-source charge q gs - 6.5 - gate-drain charge q gd - 9.1 - turn-on delay time t d(on) v dd =250v i d =11a r g =25 ? (note4,5) - 45 - ns turn-on rise time t r - 35 - turn-off delay time t d(off) - 100 - turn-off fall time t f - 35 - input capacitance c iss v ds =25v, v gs =0v, f=1.0mhz - 1400 - pf output capacitance c oss - 170 - reverse transfer capacitance c rss - 12 - source-drain diode ratings continuous source current i s v gs 2013. 5. 03 3/7 kf11n50p/f revision no : 1 normalized breakdown voltage bv dss gate - source voltage v gs (v) fig1. i d - v ds drain - source voltage v ds (v) drain current i d (a) 10 0 10 -1 10 1 10 2 79 510 38 6 4 fig2. i d - v gs fig3. bv dss - t j fig4. r ds(on) - i d -100 -50 0.8 0.9 1.2 1.1 1.0 050 100 150 drain current i d (a) drain current i d (a) on - resistance r ds(on) ( ? ) fig5. i s - v sd 0.2 0.4 0.8 1.0 1.4 0.6 1.8 1.2 1.6 reverse drain current i s (a) 0.8 0.4 0.2 0.6 010 520 15 junction temperature tj ( ) c source - drain voltage v sd (v) 10 0 10 -1 10 1 10 2 fig6. r ds(on) - t j junction temperature t j ( ) 0 50 -100 -50 100 150 normalized on resistance 0.0 0.5 3.0 2.5 1.0 1.5 2.0 c v gs =10v i ds = 5.5a v gs = 0v i ds = 250 100 c 25 c 100 c 25 c 1100 0.1 10 0.1 1 10 100 v gs =10v, 7v v gs =10v v gs =7v v ds =20v v gs =5v
2013. 5. 03 4/7 kf11n50p/f revision no : 1 drain current i d (a) gate - charge q g (nc) drain - source voltage v ds (v) 0 12 10 6 2 4 8 35 40 15 5 25 20 30 10 0 fig8. q g - v gs fig9. safe operation area gate - source voltage v gs (v) drain current i d (a) drain - source voltage v ds (v) fig10. safe operation area drain current i d (a) (kf11n50p) (kf11n50f) i d =11a c junction temperature t j ( ) fig11. i d - t j v ds = 400v 10 1 10 2 10 1 10 -1 10 0 10 0 10 -2 10 2 10 3 operation in this area is limited by r ds(on) t c = 25 t j = 150 single pulse c c fig 7. c - v ds drain - source voltage v ds (v) capacitance (pf) 10 1 10 2 10 3 10 4 0 10 2 6 14 8 4 12 75 150 125 50 100 25 0 10203040 c rss c oss c iss 10 2 10 -2 10 1 10 0 10 1 10 0 10 -1 10 2 10 3 operation in this area is limited by r ds(on) t c = 25 t j = 150 single pulse c c dc 10ms 1m s 10 s 100 s dc 10ms 1ms 100 s 10 s
2013. 5. 03 5/7 kf11n50p/f revision no : 1 time (sec) (kf11n50p) 10 -5 10 -3 10 -2 10 -1 10 0 10 1 10 -4 10 -2 10 -1 10 0 fig12. transient thermal response curve transient thermal resistance duty=0.5 0.05 time ( sec ) fig13. transient thermal response curve transient thermal resistance 0. 02 0.2 0.01 0. 1 t 1 t 2 p dm - duty factor, d= t 1 /t 2 - r th(j-c) = 0.7 c/w max. (kf11n50f) 10 -5 10 -3 10 -2 10 -1 10 0 10 1 10 -4 10 -2 10 -1 10 1 10 0 s ingle pulse t 1 t 2 p dm - duty factor, d= t 1 /t 2 - r th(j-c) = 2.7 c/w max. dut y=0.5 0.05 0.02 0.2 0.01 0.1 singl e p ul se
2013. 5. 03 6/7 kf11n50p/f revision no : 1 fig14. gate charge i d i d v ds v gs v gs v ds v gs 1.0 ma fast recovery diode 10v 10 v 25 ? r l q g q gd q gs q t p fig16. resistive load switching fig15. single pulsed avalanche energy v ds (t) i d (t) v ds v gs 10 v 25 ? l time e as = li as 2 bv dss - v dd bv dss 1 2 v dd i as bv dss v ds v gs t r t d(off) t off t d(on) t on t f 10% 90% 50v 0.8 v dss 0.5 v dss
2013. 5. 03 7/7 kf11n50p/f revision no : 1 fig17. source - drain diode reverse recovery and dv /dt i f i s v ds v sd i sd (dut) v ds (dut) v gs 10v driver dut body diode recovery dv/dt body diode forword voltage drop body diode forword current body diode reverse current di/dt v dd i rm 0.5 v dss
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